Infineon Applied sciences AG has partnered with FOXESS, a distinguished participant within the inexperienced power sector, to boost the effectivity and energy density of power storage purposes. Infineon will provide its superior energy semiconductor gadgets to FOXESS, facilitating the event of modern options within the inexperienced power business.
Particularly, Infineon will present FOXESS with its CoolSiC MOSFETs 1200 V for industrial power storage purposes, together with EiceDRIVER gate drivers. Moreover, FOXESS’ string PV inverters will make the most of Infineon’s IGBT7 H7 1200 V energy semiconductor gadgets.
FOXESS’ H3PRO power storage sequence makes use of Infineon’s CoolSiC MOSFETs 1200 V.
As the worldwide marketplace for photovoltaic power storage programs (PV-ES) continues to develop quickly, enhancing energy density has grow to be essential for achievement. Infineon’s energy semiconductor gadgets, together with CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V sequence, incorporate state-of-the-art semiconductor applied sciences tailor-made to industrial purposes, addressing the rising demand for effectivity and energy density in power storage purposes.
Mr. Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure at Infineon Applied sciences Larger China, expressed delight in collaborating with FOXESS to drive decarbonization by increased energy density and extra dependable programs for PV-ES purposes.
FOXESS’ R Sequence redefines the general design of the 100 kW mannequin through the use of Infineon’s IGBT7 H7 sequence.
Mr. Zhu Jingcheng, Chairman of FOXESS, highlighted the numerous enhancements in product reliability and effectivity achieved by the help of Infineon’s superior elements. He emphasised Infineon’s technical experience and product high quality as key components strengthening FOXESS’ competitiveness and market presence.
Infineon’s CoolSiC MOSFETs 1200 V provide excessive energy density, decreasing losses by 50 % and offering extra power with out rising battery dimension. FOXESS’ H3PRO 15 kW-30 kW power storage sequence, geared up with Infineon’s CoolSiC MOSFETs, has achieved exceptional effectivity and gross sales development within the international market.
Equally, Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V sequence enhances the general effectivity and energy density of inverters. By leveraging Infineon’s superior energy semiconductor gadgets, FOXESS has optimized the design of its R Sequence 75-110 kW industrial and business mannequin, reaching excellent effectivity of as much as 98.6 %.
Infineon presents a complete vary of EiceDRIVER gate drivers, making certain nice integration with all energy gadgets, together with CoolSiC and IGBTs, simplifying design processes, and enhancing system reliability.
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